Invention Grant
- Patent Title: MEMS device with release aperture
- Patent Title (中): 具有释放孔径的MEMS器件
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Application No.: US12908985Application Date: 2010-10-21
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Publication No.: US08716051B2Publication Date: 2014-05-06
- Inventor: Chung-Hsien Lin , Chia-Hua Chu , Chun-Wen Cheng
- Applicant: Chung-Hsien Lin , Chia-Hua Chu , Chun-Wen Cheng
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
The present disclosure provides a method of fabricating a micro-electro-mechanical systems (MEMS) device. In an embodiment, a method includes providing a substrate including a first sacrificial layer, forming a micro-electro-mechanical systems (MEMS) structure above the first sacrificial layer, and forming a release aperture at substantially a same level above the first sacrificial layer as the MEMS structure. The method further includes forming a second sacrificial layer above the MEMS structure and within the release aperture, and forming a first cap over the second sacrificial layer and the MEMS structure, wherein a leg of the first cap is disposed between the MEMS structure and the release aperture. The method further includes removing the first sacrificial layer, removing the second sacrificial layer through the release aperture, and plugging the release aperture. A MEMS device formed by such a method is also provided.
Public/Granted literature
- US20120098074A1 MEMS DEVICE WITH RELEASE APERTURE Public/Granted day:2012-04-26
Information query
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