Invention Grant
US08716056B2 Method for forming chalcogenide switch with crystallized thin film diode isolation
有权
用结晶薄膜二极管隔离形成硫族化物开关的方法
- Patent Title: Method for forming chalcogenide switch with crystallized thin film diode isolation
- Patent Title (中): 用结晶薄膜二极管隔离形成硫族化物开关的方法
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Application No.: US12564386Application Date: 2009-09-22
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Publication No.: US08716056B2Publication Date: 2014-05-06
- Inventor: Ward Parkinson
- Applicant: Ward Parkinson
- Applicant Address: US MI Sterling Heights
- Assignee: Ovonyx, Inc.
- Current Assignee: Ovonyx, Inc.
- Current Assignee Address: US MI Sterling Heights
- Agent Kevin L. Bray
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A three-dimensional memory array formed of one or more two-dimensional memory arrays of one-time programmable memory elements arranged in horizontal layers and stacked vertically upon one another; and a two-dimensional memory array of reprogrammable phase change memory elements stacked on the one or more two-dimensional memory arrays as the top layer of the three-dimensional memory array.
Public/Granted literature
- US20100009522A1 Method for Forming Chalcogenide Switch with Crystallized Thin Film Diode Isolation Public/Granted day:2010-01-14
Information query
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