Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13718051Application Date: 2012-12-18
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Publication No.: US08716061B2Publication Date: 2014-05-06
- Inventor: Shunpei Yamazaki , Junichiro Sakata , Tetsunori Maruyama , Yuki Imoto , Yuji Asano , Junichi Koezuka
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2008-287051 20081107
- Main IPC: H01L21/16
- IPC: H01L21/16
Abstract:
In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers.
Public/Granted literature
- US08597977B2 Semiconductor device and method for manufacturing the same Public/Granted day:2013-12-03
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