Invention Grant
- Patent Title: Method for contacting agglomerate terminals of semiconductor packages
- Patent Title (中): 接触半导体封装的聚集端子的方法
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Application No.: US14040089Application Date: 2013-09-27
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Publication No.: US08716068B2Publication Date: 2014-05-06
- Inventor: Darvin R. Edwards , Siva P. Gurrum , Masood Murtuza , Matthew D. Romig , Kazunori Hayata
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Steven A. Shaw; Wade James Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/50
- IPC: H01L21/50
Abstract:
In fabricating a semiconductor device first layers are formed of sintered bondable and solderable metal on a carrier strip. The first layers are patterned into first pads and second pads. A set of first pads is surrounding each second pad. The first pads are spaced from the second pad by gaps. The patterned layers are formed of agglomerate metal vertically on the first layers of sintered bondable and solderable metal of the first pads and of the second pad. The second layers are formed of sintered bondable and solderable metal vertically on the layers of agglomerate metal of the first pads.
Public/Granted literature
- US20140038358A1 METHOD FOR CONTACTING AGGLOMERATE TERMINALS OF SEMICONDUCTOR PACKAGES Public/Granted day:2014-02-06
Information query
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