Invention Grant
US08716074B2 Methods for forming isolated fin structures on bulk semiconductor material
有权
在体半导体材料上形成隔离鳍结构的方法
- Patent Title: Methods for forming isolated fin structures on bulk semiconductor material
- Patent Title (中): 在体半导体材料上形成隔离鳍结构的方法
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Application No.: US13611193Application Date: 2012-09-12
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Publication No.: US08716074B2Publication Date: 2014-05-06
- Inventor: Witold Maszara , Hemant Adhikari
- Applicant: Witold Maszara , Hemant Adhikari
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries, Inc.
- Current Assignee: GlobalFoundries, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L21/8238 ; H01L21/336
Abstract:
Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on the layer of the second semiconductor material and anisotropically etching the layer of the second semiconductor material and the layer of the first semiconductor material using the fin pattern mask as an etch mask. The anisotropic etching results in a fin formed from the second semiconductor material and an exposed region of first semiconductor material underlying the fin. The method further comprises forming an isolation layer in the exposed region of first semiconductor material underlying the fin.
Public/Granted literature
- US20130005114A1 METHODS FOR FORMING ISOLATED FIN STRUCTURES ON BULK SEMICONDUCTOR MATERIAL Public/Granted day:2013-01-03
Information query
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