Invention Grant
- Patent Title: High productivity combinatorial dual shadow mask design
- Patent Title (中): 高生产率组合双荫罩设计
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Application No.: US13275822Application Date: 2011-10-18
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Publication No.: US08716115B2Publication Date: 2014-05-06
- Inventor: Venkat Ananthan , Prashant B. Phatak
- Applicant: Venkat Ananthan , Prashant B. Phatak
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L27/32
- IPC: H01L27/32

Abstract:
Dual shadow mask design can overcome the size and resolution limitations of shadow masks to provide capacitor structures with small effective areas. The capacitor structures have bottom and top electrode layers patterned using shadow masks, sandwiching a dielectric layer. The effective areas of the capacitors are the overlapping areas of the top and bottom electrodes, thus allowing small area sizes without subjected to the size limitation of the electrodes. The dual shadow mask design can be used in conjunction with high productivity combinatorial processes for screening and optimizing dielectric materials and fabrication processes.
Public/Granted literature
- US20130093049A1 High Productivity Combinatorial Dual Shadow Mask Design Public/Granted day:2013-04-18
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