Invention Grant
- Patent Title: Method of fabricating semiconductor devices
- Patent Title (中): 制造半导体器件的方法
-
Application No.: US13326323Application Date: 2011-12-15
-
Publication No.: US08716151B2Publication Date: 2014-05-06
- Inventor: Haiyang Zhang , Dongjiang Wang
- Applicant: Haiyang Zhang , Dongjiang Wang
- Applicant Address: CN
- Assignee: Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN
- Agency: Innovation Counsel LLP
- Priority: CN201110332325 20111028
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469 ; H01L21/3205 ; H01L21/4763 ; H01L21/311 ; B44C1/22
Abstract:
The present disclosure relates to a method of fabricating semiconductor devices. In the method provided by the present invention, by filling with diblock copolymer a recess of an interlayer dielectric layer naturally formed between two gate lines and then performing a self-assembly process of the diblock copolymer, a small-sized contact hole precisely aligned with an doped area can be formed, and thus misalignment between the contact hole and the doped area can be eliminated or alleviated.
Public/Granted literature
- US20130109175A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICES Public/Granted day:2013-05-02
Information query
IPC分类:
