Invention Grant
US08716589B2 Doped lead tellurides for thermoelectric applications 失效
掺杂铅碲化物用于热电应用

Doped lead tellurides for thermoelectric applications
Abstract:
A p- or n-conductive semiconductor material comprises a compound of the general formula (I) Pb1−(x1+x2+ . . . +xn)A1x1A2x2 . . . AnxnTe1+z  (I) where: in each case independently n is the number of chemical elements different from Pb and Te 1 ppm≦x1 . . . xn≦0.05 −0.05≦z≦0.05 and n≧2 A1 . . . An are different from one another and are selected from the group of the elements Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, As, Sb, Bi, S, Se, Br, I, Sc, Y, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu or n=1 A1 is selected from Ti, Zr, Ag, Hf, Cu, Gr, Nb, Ta.
Public/Granted literature
Information query
Patent Agency Ranking
0/0