Invention Grant
- Patent Title: Doped lead tellurides for thermoelectric applications
- Patent Title (中): 掺杂铅碲化物用于热电应用
-
Application No.: US12293170Application Date: 2007-01-29
-
Publication No.: US08716589B2Publication Date: 2014-05-06
- Inventor: Frank Haass
- Applicant: Frank Haass
- Applicant Address: DE Ludwigshafen
- Assignee: BASF Aktiengesellschaft
- Current Assignee: BASF Aktiengesellschaft
- Current Assignee Address: DE Ludwigshafen
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: EP06111281 20060316
- International Application: PCT/EP2007/050851 WO 20070129
- International Announcement: WO2007/104601 WO 20070920
- Main IPC: H01L35/16
- IPC: H01L35/16

Abstract:
A p- or n-conductive semiconductor material comprises a compound of the general formula (I) Pb1−(x1+x2+ . . . +xn)A1x1A2x2 . . . AnxnTe1+z (I) where: in each case independently n is the number of chemical elements different from Pb and Te 1 ppm≦x1 . . . xn≦0.05 −0.05≦z≦0.05 and n≧2 A1 . . . An are different from one another and are selected from the group of the elements Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, As, Sb, Bi, S, Se, Br, I, Sc, Y, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu or n=1 A1 is selected from Ti, Zr, Ag, Hf, Cu, Gr, Nb, Ta.
Public/Granted literature
- US20090084422A1 DOPED LEAD TELLURIDES FOR THERMOELECTRIC APPLICATIONS Public/Granted day:2009-04-02
Information query
IPC分类: