Invention Grant
- Patent Title: Photoelectric conversion device and method for operating the same
- Patent Title (中): 光电转换装置及其操作方法
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Application No.: US13252226Application Date: 2011-10-04
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Publication No.: US08716646B2Publication Date: 2014-05-06
- Inventor: Atsushi Hirose
- Applicant: Atsushi Hirose
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2010-228046 20101008
- Main IPC: H01J40/14
- IPC: H01J40/14
Abstract:
In a photoelectric conversion device including a photodiode and a current mirror circuit, a diode-connected transistor is provided in parallel with the photodiode. The transistor serves as a leakage path for rapidly discharging charge stored in the gate capacitance in the current mirror circuit. Thus, the response speed of the photoelectric conversion device is increased, and output of an abnormal value is reduced.
Public/Granted literature
- US20120085892A1 PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR OPERATING THE SAME Public/Granted day:2012-04-12
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