Invention Grant
US08716688B2 Electronic device incorporating memristor made from metallic nanowire 有权
电子装置结合由金属纳米线制成的忆阻器

Electronic device incorporating memristor made from metallic nanowire
Abstract:
An electronic device includes a first electrode, a second electrode and a nanowire connected between the first and second electrodes to allow electric current flow. The nanowire is made from a conductive material exhibiting a variable resistance due to electromigration. The nanowire is repeatably switchable between two states. A voltage clamp operates through feedback control to maintain the voltage across the nanowire and prevent thermal runaway.
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