Invention Grant
US08716688B2 Electronic device incorporating memristor made from metallic nanowire
有权
电子装置结合由金属纳米线制成的忆阻器
- Patent Title: Electronic device incorporating memristor made from metallic nanowire
- Patent Title (中): 电子装置结合由金属纳米线制成的忆阻器
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Application No.: US13035582Application Date: 2011-02-25
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Publication No.: US08716688B2Publication Date: 2014-05-06
- Inventor: Douglas R. Strachan , Stephen L. Johnson
- Applicant: Douglas R. Strachan , Stephen L. Johnson
- Applicant Address: US KY Lexington
- Assignee: The University of Kentucky Research Foundation
- Current Assignee: The University of Kentucky Research Foundation
- Current Assignee Address: US KY Lexington
- Agency: King & Schickli, PLLC
- Main IPC: H01L45/00
- IPC: H01L45/00

Abstract:
An electronic device includes a first electrode, a second electrode and a nanowire connected between the first and second electrodes to allow electric current flow. The nanowire is made from a conductive material exhibiting a variable resistance due to electromigration. The nanowire is repeatably switchable between two states. A voltage clamp operates through feedback control to maintain the voltage across the nanowire and prevent thermal runaway.
Public/Granted literature
- US20110204310A1 ELECTRONIC DEVICE INCORPORATING MEMRISTOR MADE FROM METALLIC NANOWIRE Public/Granted day:2011-08-25
Information query
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