Invention Grant
US08716690B2 Variable resistor, non-volatile memory device using the same, and methods of fabricating the same
有权
可变电阻器，使用其的非易失性存储器件及其制造方法
- Patent Title: Variable resistor, non-volatile memory device using the same, and methods of fabricating the same
- Patent Title (中): 可变电阻器，使用其的非易失性存储器件及其制造方法
-
Application No.: US13689390Application Date: 2012-11-29
-
Publication No.: US08716690B2Publication Date: 2014-05-06
- Inventor: Woong Kim , Yong chan Ju , Seungwook Kim
- Applicant: SK hynix Inc. , Korea University Research and Business Foundation
- Applicant Address: KR Icheon KR Seoul
- Assignee: SK Hynic Inc.,Korea University Research and Business Foundation
- Current Assignee: SK Hynic Inc.,Korea University Research and Business Foundation
- Current Assignee Address: KR Icheon KR Seoul
- Priority: KR10-2011-0126388 20111129
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
A variable resistor, a nonvolatile memory device and methods of fabricating the same are provided. The variable resistor includes an anode electrode and a cathode electrode, a variable resistive layer including CdS nanoscale particles provided between the anode electrode and the cathode electrode, and an initial metal atom diffusion layer within the variable resistive layer. The variable resistor is a bipolar switching element and configured to be in a reset state when a positive voltage relative to a cathode electrode is applied to the anode electrode, and configured to be in a set state when a negative voltage relative to the cathode electrode is applied to the anode electrode.
Public/Granted literature
- US20130134374A1 VARIABLE RESISTOR, NON-VOLATILE MEMORY DEVICE USING THE SAME, AND METHODS OF FABRICATING THE SAME Public/Granted day:2013-05-30
Information query
IPC分类:
