Invention Grant
- Patent Title: Light emitting diode and method for fabricating the same
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Application No.: US13306091Application Date: 2011-11-29
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Publication No.: US08716692B2Publication Date: 2014-05-06
- Inventor: Su-Hyoung Son
- Applicant: Su-Hyoung Son
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Brinks Gilson & Lione
- Priority: KR10-2010-0120848 20101130
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
The disclosed light emitting diode includes a substrate provided, at a surface thereof, with protrusions, a buffer layer formed over the entirety of the surface of the substrate, a first semiconductor layer formed over the buffer layer, an active layer formed on a portion of the first semiconductor layer, a second semiconductor layer formed over the active layer, a first electrode pad formed on another portion of the first semiconductor layer, except for the portion where the active layer is formed, and a second electrode pad formed on the second semiconductor layer. Each protrusion has a side surface inclined from the surface of the substrate at a first angle, and another side surface inclined from the surface of the substrate at a second angle different from the first angle.
Public/Granted literature
- US20120132951A1 LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2012-05-31
Information query
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