Invention Grant
US08716711B2 Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
有权
具有非晶氧化物半导体层的薄膜晶体管和薄膜二极管
- Patent Title: Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
- Patent Title (中): 具有非晶氧化物半导体层的薄膜晶体管和薄膜二极管
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Application No.: US13012125Application Date: 2011-01-24
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Publication No.: US08716711B2Publication Date: 2014-05-06
- Inventor: Tatsuya Iwasaki
- Applicant: Tatsuya Iwasaki
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper and Scinto
- Priority: JP2005-258272 20050906
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.
Public/Granted literature
- US20110114947A1 THIN-FILM TRANSISTOR AND THIN-FILM DIODE HAVING AMORPHOUS-OXIDE SEMICONDUCTOR LAYER Public/Granted day:2011-05-19
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