Invention Grant
- Patent Title: Thin film transistor substrate
- Patent Title (中): 薄膜晶体管基板
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Application No.: US13735501Application Date: 2013-01-07
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Publication No.: US08716715B2Publication Date: 2014-05-06
- Inventor: Hyuk-Jin Kim , Kyung-Wook Kim
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin
- Agency: H.C. Park Associates, PLC
- Priority: KR10-2005-0061359 20050707
- Main IPC: H01L29/04
- IPC: H01L29/04

Abstract:
A thin film transistor substrate including a thin film transistor having a drain electrode with an electrode portion, which overlaps with a semiconductor layer, and an extended portion, which extends from the electrode portion and has a portion overlapping with a storage electrode or storage electrode line. A passivation layer is arranged on the drain electrode, and it has a contact hole that partially exposes the extended portion of the drain electrode without exposing a step in the extended portion caused by the storage electrode or storage electrode line. A pixel electrode is arranged on the passivation layer and is electrically connected with the extended portion of the drain electrode through the contact hole.
Public/Granted literature
- US20130119390A1 THIN FILM TRANSISTOR SUBSTRATE Public/Granted day:2013-05-16
Information query
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