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Invention Grant
US08716719B2 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus 失效
固态成像装置，制造固态成像装置的方法和电子装置

Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
Abstract:
Provided is a solid-state imaging device including: a first-conductivity-type substrate; a second-conductivity-type well formed in a surface side of the first-conductivity-type substrate; a photoelectric conversion area configured with a first-conductivity-type-impurity area formed in the second-conductivity-type well to convert incident light to charges; a first-conductivity-type-charge retaining area configured with the first-conductivity-type-impurity area formed in the second-conductivity-type well to retain the charges converted by the photoelectric conversion area until the charges are read out; a charge voltage conversion area configured with the first-conductivity-type-impurity area formed in the second-conductivity-type well to convert the charges retained in the charge retaining area to a voltage; and a first-conductivity-type-layer area configured by forming a first-conductivity-type-in a convex shape from a boundary between the first-conductivity-type substrate and the second-conductivity-type well to a predetermined depth of the surface side under at least one portion of the charge retaining area and the charge voltage conversion area.
Abstract(Chinese):

提供一种固态成像装置，包括：第一导电型基板; 在第一导电型基板的表面侧形成的第二导电型阱; 光电转换区，配置有形成在第二导电型阱中的第一导电型杂质区，以将入射光转换成电荷; 形成在第二导电型阱中的第一导电型杂质区的第一导电型电荷保持区，以保持由光电转换区转换的电荷，直到读出电荷; 电荷电压转换区域，其被配置有形成在第二导电型阱中的第一导电型杂质区域，以将保留在电荷保持区域中的电荷转换成电压; 以及第一导电型层区域，其通过从第一导电型基板和第二导电型阱之间的边界到表面的预定深度形成具有凸形的第一导电类型 在电荷保持区域和充电电压转换区域的至少一部分之下。

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