Invention Grant
- Patent Title: Semiconductor light-emitting device
- Patent Title (中): 半导体发光装置
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Application No.: US13541192Application Date: 2012-07-03
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Publication No.: US08716738B2Publication Date: 2014-05-06
- Inventor: Jung Hyeok Bae
- Applicant: Jung Hyeok Bae
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2008-0114616 20081118
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A semiconductor light-emitting device includes a light emitting structure on a substrate. The light emitting structure includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. A plurality of transparent layers is disposed on the light emitting structure. A metal layer is disposed between the plurality of transparent layers. An electrode is electrically connected to the metal layer and contacts a portion of the metal layer.
Public/Granted literature
- US20120267677A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2012-10-25
Information query
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