An electrode structure for an LED includes a plurality of blind holes and a plurality of N-type metal electrodes. The LED comprises, in this order by stacking, an intrinsic semiconductor layer, an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a mirror layer, a buffer layer, a bonding layer, a permanent substrate and a P-type electrode. The blind holes are distributed in a pattern and run through the intrinsic semiconductor layer to reach the N-type semiconductor layer. The N-type metal electrodes respectively run through the blind holes to connect the N-type semiconductor layer. Through a 3D contact interface formed by the blind hole, not only contact impedance between the N-type metal electrode and the N-type semiconductor layer can be reduced, the N-type metal electrode also can be firmly held in the blind hole without peeling off.