Invention Grant
- Patent Title: Optoelectronic semiconductor device and the manufacturing method thereof
- Patent Title (中): 光电半导体器件及其制造方法
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Application No.: US13747593Application Date: 2013-01-23
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Publication No.: US08716743B2Publication Date: 2014-05-06
- Inventor: Tz-Chiang Yu , Jenn-Hwa Fu , Hsin-Hsiung Huang
- Applicant: Epistar Corporation
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Bacon & Thomas, PLLC
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L31/0203
Abstract:
The present application provides an optoelectronic semiconductor device, comprising: a substrate; an optoelectronic system on the substrate; a barrier layer on the optoelectronic system, wherein the barrier layer thickness is not smaller than 10 angstroms; and an electrode on the barrier layer.
Public/Granted literature
- US20130200423A1 OPTOELECTRONIC SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF Public/Granted day:2013-08-08
Information query
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