Invention Grant
- Patent Title: Transistor with self-aligned channel width
- Patent Title (中): 具有自对准沟道宽度的晶体管
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Application No.: US13278038Application Date: 2011-10-20
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Publication No.: US08716768B2Publication Date: 2014-05-06
- Inventor: Jeong-Ho Lyu , Sohei Manabe
- Applicant: Jeong-Ho Lyu , Sohei Manabe
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113
Abstract:
A device includes a transistor including a source and a drain disposed in a substrate and a gate disposed above the substrate. The gate includes a first longitudinal member disposed above the source and the drain and running substantially parallel to a channel of the transistor. The first longitudinal member is disposed over a first junction isolation area. The gate also includes a second longitudinal member disposed above the source and the drain and running substantially parallel to the channel of the transistor. The second longitudinal member is disposed over a second junction isolation region. The gate also includes a cross member running substantially perpendicular to the channel of the transistor and connecting the first longitudinal member to the second longitudinal member. The cross member is disposed above and between the source and the drain.
Public/Granted literature
- US20130099296A1 TRANSISTOR WITH SELF-ALIGNED CHANNEL WIDTH Public/Granted day:2013-04-25
Information query
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