Invention Grant
- Patent Title: Anti-reflection structures for CMOS image sensors
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Application No.: US13418706Application Date: 2012-03-13
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Publication No.: US08716771B2Publication Date: 2014-05-06
- Inventor: James W. Adkisson , John J. Ellis-Monaghan , Jeffrey P. Gambino , Charles F. Musante
- Applicant: James W. Adkisson , John J. Ellis-Monaghan , Jeffrey P. Gambino , Charles F. Musante
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Anthony J. Canale
- Main IPC: H01L31/10
- IPC: H01L31/10 ; H01L31/112

Abstract:
Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.
Public/Granted literature
- US20120168835A1 ANTI-REFLECTION STRUCTURES FOR CMOS IMAGE SENSORS Public/Granted day:2012-07-05
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