A flash memory device includes an active region, drain contacts, a source contact line, and source contacts. The active regions are formed on a substrate extend at least from a source region to a drain region of the substrate. The drain contacts are formed over the active regions in the drain region. The source contact line is formed in the source region of the semiconductor substrate. The source contact line intersects the active regions and is continuously line-shaped. The source contact line includes source contacts formed at locations where the source contact line and the active regions intersect. The source contacts are zigzag-shaped and are separated from corresponding drain contacts by a given distance.