Invention Grant
US08716813B2 Scaled equivalent oxide thickness for field effect transistor devices
失效
场效应晶体管器件的等效氧化物厚度变化
- Patent Title: Scaled equivalent oxide thickness for field effect transistor devices
- Patent Title (中): 场效应晶体管器件的等效氧化物厚度变化
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Application No.: US13556333Application Date: 2012-07-24
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Publication No.: US08716813B2Publication Date: 2014-05-06
- Inventor: Takashi Ando , Changhwan Choi , Unoh Kwon , Vijay Narayanan
- Applicant: Takashi Ando , Changhwan Choi , Unoh Kwon , Vijay Narayanan
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A field effect transistor device includes a first gate stack portion including a dielectric layer disposed on a substrate, a first TiN layer disposed on the dielectric layer, a metallic layer disposed on the dielectric layer, and a second TiN layer disposed on the metallic layer, a first source region disposed adjacent to the first gate stack portion, and a first drain region disposed adjacent to the first gate stack portion.
Public/Granted literature
- US20120286363A1 Scaled Equivalent Oxide Thickness for Field Effect Transistor Devices Public/Granted day:2012-11-15
Information query
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