Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13447566Application Date: 2012-04-16
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Publication No.: US08716826B2Publication Date: 2014-05-06
- Inventor: Ryouichi Kawano , Tomoyuki Yamazaki , Michio Nemoto , Mituhiro Kakefu
- Applicant: Ryouichi Kawano , Tomoyuki Yamazaki , Michio Nemoto , Mituhiro Kakefu
- Applicant Address: JP Kawasaki-shi
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JP Kawasaki-shi
- Agency: Rabin & Berdo, P.C.
- Priority: JP2008-188613 20080722
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
In a semiconductor device having a pn-junction diode structure that includes anode diffusion region including edge area, anode electrode on anode diffusion region, and insulator film on edge area of anode diffusion region, the area of anode electrode above anode diffusion region with insulator film interposed between anode electrode and anode diffusion region is narrower than the area of insulator film on edge area of anode diffusion region.
Public/Granted literature
- US20120193749A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-08-02
Information query
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