Invention Grant
US08716827B2 Diffusion resistor with reduced voltage coefficient of resistance and increased breakdown voltage using CMOS wells
有权
扩散电阻器具有降低的电阻系数和使用CMOS井的击穿电压增加
- Patent Title: Diffusion resistor with reduced voltage coefficient of resistance and increased breakdown voltage using CMOS wells
- Patent Title (中): 扩散电阻器具有降低的电阻系数和使用CMOS井的击穿电压增加
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Application No.: US13609818Application Date: 2012-09-11
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Publication No.: US08716827B2Publication Date: 2014-05-06
- Inventor: Kamel Benaissa , Amitava Chatterjee
- Applicant: Kamel Benaissa , Amitava Chatterjee
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L29/00
Abstract:
Integrated circuits and manufacturing methods are presented for creating diffusion resistors (101, 103) in which the diffusion resistor well is spaced from oppositely doped wells to mitigate diffusion resistor well depletion under high biasing so as to provide reduced voltage coefficient of resistivity and increased breakdown voltage for high-voltage applications.
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