Invention Grant
US08716831B2 One time programmable structure using a gate last high-K metal gate process
有权
一次可编程结构使用栅极最后一个高K金属栅极工艺
- Patent Title: One time programmable structure using a gate last high-K metal gate process
- Patent Title (中): 一次可编程结构使用栅极最后一个高K金属栅极工艺
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Application No.: US13249022Application Date: 2011-09-29
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Publication No.: US08716831B2Publication Date: 2014-05-06
- Inventor: Xiangdong Chen , Wei Xia
- Applicant: Xiangdong Chen , Wei Xia
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L23/525
- IPC: H01L23/525
Abstract:
An eFuse structure having a first metal layer serving as a fuse with a gate including an undoped polysilicon (poly), a second metal layer and a high-K dielectric layer all formed on a silicon substrate with a Shallow Trench Isolation formation, and a process of fabricating same are provided. The eFuse structure enables use of low amounts of current to blow a fuse thus allowing the use of a smaller MOSFET.
Public/Granted literature
- US20130082347A1 One Time Programmable Structure Using a Gate Last High-K Metal Gate Process Public/Granted day:2013-04-04
Information query
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