Invention Grant
- Patent Title: Method for fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
-
Application No.: US13230973Application Date: 2011-09-13
-
Publication No.: US08716842B2Publication Date: 2014-05-06
- Inventor: Kee-Jeung Lee , Kwon Hong , Kyung-Woong Park , Ji-Hoon Ahn
- Applicant: Kee-Jeung Lee , Kwon Hong , Kyung-Woong Park , Ji-Hoon Ahn
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0126247 20101210
- Main IPC: H01L29/72
- IPC: H01L29/72
Abstract:
A semiconductor device includes a dielectric layer in which zirconium, hafnium, and a IV group element are mixed. A method for fabricating a capacitor includes forming a bottom electrode, forming the dielectric layer and forming a top electrode over the dielectric layer.
Public/Granted literature
- US20120146196A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2012-06-14
Information query
IPC分类:
