Invention Grant
- Patent Title: Integrated circuit including a gate and a metallic connecting line
- Patent Title (中): 集成电路包括门和金属连接线
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Application No.: US12760732Application Date: 2010-04-15
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Publication No.: US08716862B2Publication Date: 2014-05-06
- Inventor: Chii-Ping Chen , Dian-Hau Chen
- Applicant: Chii-Ping Chen , Dian-Hau Chen
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
An integrated circuit includes a gate of a transistor disposed over a substrate. A connecting line is disposed over the substrate. The connecting line is coupled with an active area of the transistor. A level difference between a top surface of the connecting line and a top surface of the gate is about 400 Å or less. A via structure is coupled with the gate and the connecting line. A metallic line structure is coupled with the via structure.
Public/Granted literature
- US20100283152A1 INTEGRATED CIRCUITS INCLUDING ILD STRUCTURE, SYSTEMS, AND FABRICATION METHODS THEREOF Public/Granted day:2010-11-11
Information query
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