Invention Grant
US08716864B2 Solderless die attach to a direct bonded aluminum substrate 有权
无焊模贴附于直接键合的铝基板上

  • Patent Title: Solderless die attach to a direct bonded aluminum substrate
  • Patent Title (中): 无焊模贴附于直接键合的铝基板上
  • Application No.: US13490459
    Application Date: 2012-06-07
  • Publication No.: US08716864B2
    Publication Date: 2014-05-06
  • Inventor: Nathan Zommer
  • Applicant: Nathan Zommer
  • Applicant Address: US CA Milpitas
  • Assignee: IXYS Corporation
  • Current Assignee: IXYS Corporation
  • Current Assignee Address: US CA Milpitas
  • Agency: Imperium Patent Works
  • Agent T. Lester Wallace; Darien K. Wallace
  • Main IPC: H01L29/72
  • IPC: H01L29/72
Solderless die attach to a direct bonded aluminum substrate
Abstract:
A DBA-based power device includes a DBA (Direct Bonded Aluminum) substrate. An amount of silver nanoparticle paste of a desired shape and size is deposited (for example by micro-jet deposition) onto a metal plate of the DBA. The paste is then sintered, thereby forming a sintered silver feature that is in electrical contact with an aluminum plate of the DBA. The DBA is bonded (for example, is ultrasonically welded) to a lead of a leadframe. Silver is deposited onto the wafer back side and the wafer is singulated into dice. In a solderless silver-to-silver die attach process, the silvered back side of a die is pressed down onto the sintered silver feature on the top side of the DBA. At an appropriate temperature and pressure, the silver of the die fuses to the sintered silver of the DBA. After wirebonding, encapsulation and lead trimming, the DBA-based power device is completed.
Public/Granted literature
Information query
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L29/00 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件(H01L31/00至H01L47/00,H01L51/05优先;除半导体或其电极之外的零部件入H01L23/00;由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00)
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的(H01L29/96优先)
H01L29/70 ...双极器件
H01L29/72 ....晶体管型器件,如连续响应于所施加的控制信号的
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