Invention Grant
- Patent Title: Circuit comprising transistors that have different threshold voltage values
- Patent Title (中): 电路包括具有不同阈值电压值的晶体管
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Application No.: US13173083Application Date: 2011-06-30
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Publication No.: US08717004B2Publication Date: 2014-05-06
- Inventor: Carlos Carvalho
- Applicant: Carlos Carvalho
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: G05F3/16
- IPC: G05F3/16

Abstract:
A circuit comprises a first amplifier and a second amplifier. The first amplifier is configured to amplify a first voltage difference between a first voltage and a second voltage, and to generate a third voltage. The second amplifier is configured to amplify a second voltage difference between the third voltage and an input voltage, and to generate an output voltage. The first voltage is a voltage at a first terminal of a first transistor. The second voltage is a voltage at a second terminal of a second transistor. A first gate of the first transistor is adapted to receive the third voltage. A second gate of the second transistor is adapted to receive the input voltage. Threshold voltage values of the first transistor and the second transistor differ.
Public/Granted literature
- US20130002351A1 VOLTAGE GENERATING CIRCUIT AND METHOD Public/Granted day:2013-01-03
Information query
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