Invention Grant
US08717076B1 Edge rate control gate drive circuit and system for low side devices with capacitor
有权
边缘速率控制栅极驱动电路和具有电容器的低端器件的系统
- Patent Title: Edge rate control gate drive circuit and system for low side devices with capacitor
- Patent Title (中): 边缘速率控制栅极驱动电路和具有电容器的低端器件的系统
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Application No.: US13754543Application Date: 2013-01-30
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Publication No.: US08717076B1Publication Date: 2014-05-06
- Inventor: Adam L. Shook
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Alan A. R. Cooper; W. James Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H03K5/12
- IPC: H03K5/12
Abstract:
An apparatus, comprising: a PMOS current mirror have a first PFET and a second PFET coupled at their respective gates; a first current source coupled to drain of the first PFET; a second current source configured to have a current that is greater than the first current source, coupled to the drain of the second PFET; a capacitor coupled to the gates of the PFET current mirror; a third PFET gate-coupled to the current mirror; a driver NFET having a gate coupled to the drain of the third PFET, wherein a drain of the driver NFET is coupled to the capacitor.
Public/Granted literature
- US20140125389A1 EDGE RATE CONTROL GATE DRIVE CIRCUIT AND SYSTEM FOR LOW SIDE DEVICES WITH CAPACITOR Public/Granted day:2014-05-08
Information query
IPC分类:
