Invention Grant
- Patent Title: RF device with compensatory resonator matching topology
- Patent Title (中): 具有补偿谐振器匹配拓扑的RF器件
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Application No.: US13246344Application Date: 2011-09-27
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Publication No.: US08717102B2Publication Date: 2014-05-06
- Inventor: Richard Wilson , Saurabh Goel
- Applicant: Richard Wilson , Saurabh Goel
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H03F3/04
- IPC: H03F3/04

Abstract:
An amplifier circuit includes an RF transistor, a parallel resonator and a series resonator. The RF transistor has an input, an output and an intrinsic output capacitance. The parallel resonator is connected to the output of the RF transistor and includes a first inductive component connected in parallel with the intrinsic output capacitance of the RF transistor. The series resonator connects the output of the RF transistor to an output terminal and includes a second inductive component connected in series with a capacitive component. The series resonator is operable to compensate for a change in impedance of the parallel resonator over frequency.
Public/Granted literature
- US20130076446A1 RF DEVICE WITH COMPENSATORY RESONATOR MATCHING TOPOLOGY Public/Granted day:2013-03-28
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