Invention Grant
US08717113B2 Oscillator and semiconductor integrated circuit device 有权
振荡器和半导体集成电路器件

Oscillator and semiconductor integrated circuit device
Abstract:
An oscillator and a semiconductor integrated circuit device with an internal oscillator capable of compensating the temperature characteristics even when there is a large parasitic capacitance too large to ignore directly between the output terminals of the oscillator. In an oscillator containing an inductance element L, and a capacitive element C, and an amplifier each coupled in parallel across a first and second terminal, the amplifier amplifies the resonance generated by the inductance element and capacitive element and issues an output from the first terminal and the second terminal, and in which a first resistance element with a larger resistance value than the parasitic resistance of the inductance element between the first terminal and the second terminal, is coupled in serial with the capacitive element between the first terminal and the second terminal.
Public/Granted literature
Information query
Patent Agency Ranking
0/0