Invention Grant
- Patent Title: Oscillator and semiconductor integrated circuit device
- Patent Title (中): 振荡器和半导体集成电路器件
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Application No.: US13364903Application Date: 2012-02-02
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Publication No.: US08717113B2Publication Date: 2014-05-06
- Inventor: Yoichi Iizuka , Yasuo Ikeda , Satoshi Onishi
- Applicant: Yoichi Iizuka , Yasuo Ikeda , Satoshi Onishi
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2011-025908 20110209
- Main IPC: H03B1/00
- IPC: H03B1/00

Abstract:
An oscillator and a semiconductor integrated circuit device with an internal oscillator capable of compensating the temperature characteristics even when there is a large parasitic capacitance too large to ignore directly between the output terminals of the oscillator. In an oscillator containing an inductance element L, and a capacitive element C, and an amplifier each coupled in parallel across a first and second terminal, the amplifier amplifies the resonance generated by the inductance element and capacitive element and issues an output from the first terminal and the second terminal, and in which a first resistance element with a larger resistance value than the parasitic resistance of the inductance element between the first terminal and the second terminal, is coupled in serial with the capacitive element between the first terminal and the second terminal.
Public/Granted literature
- US20120200364A1 OSCILLATOR AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2012-08-09
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