Invention Grant
- Patent Title: On-chip inductor using redistribution layer and dual-layer passivation
- Patent Title (中): 片上电感使用再分配层和双层钝化
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Application No.: US11443171Application Date: 2006-05-31
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Publication No.: US08717137B2Publication Date: 2014-05-06
- Inventor: Henry Kuo-Shun Chen , Guang-Jye Shiau , Akira Ito
- Applicant: Henry Kuo-Shun Chen , Guang-Jye Shiau , Akira Ito
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Sterne, Kessler, Goldstein & Fox PLLC
- Main IPC: H01F5/00
- IPC: H01F5/00

Abstract:
A system and method utilize a redistribution layer in a flip-chip or wirebond package, which is also used to route signals to bumps, as a layer for the construction of an on-chip inductor or a layer of a multiple-layer on-chip inductor. In one example, the redistribution layer is surrounded by dual-layer passivation to protect it, and the inductor formed thereby, from the environment and isolate it, and the inductor formed thereby, from the metal layer beneath it.
Public/Granted literature
- US20070279176A1 On-chip inductor using redistribution layer and dual-layer passivation Public/Granted day:2007-12-06
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