Invention Grant
- Patent Title: Semiconductor integrated circuit and image sensor
- Patent Title (中): 半导体集成电路和图像传感器
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Application No.: US13780685Application Date: 2013-02-28
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Publication No.: US08717219B2Publication Date: 2014-05-06
- Inventor: Jun Deguchi
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H03M1/38
- IPC: H03M1/38

Abstract:
According to one embodiment, a semiconductor integrated circuit is configured to convert a difference between a first analog voltage and a second analog voltage into a digital signal. The semiconductor integrated circuit includes m (m is an integer greater than or equal to 2) first capacitors and second capacitors. Each of the m capacitors has a first electrode and a second electrode, and the first electrodes are connected to each other. Each of the m second capacitors has a third electrode and a fourth electrode, and the third electrodes are connected to each other. The semiconductor integrated circuits further includes: a comparator configured to compare a voltage of the first electrode and a voltage of the third electrode; and a logic circuit configured to generate the digital signal based on a comparison result of the comparator.
Public/Granted literature
- US20140070975A1 SEMICONDUCTOR INTEGRATED CIRCUIT AND IMAGE SENSOR Public/Granted day:2014-03-13
Information query
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