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US08717468B2 Solid-state imaging devices and electronic devices with short wavelength absorption film over higher wavelength photoelectric conversion portion 失效
固态成像装置和具有较短波长吸收膜的电子装置在较高波长的光电转换部分上

  • Patent Title: Solid-state imaging devices and electronic devices with short wavelength absorption film over higher wavelength photoelectric conversion portion
  • Patent Title (中): 固态成像装置和具有较短波长吸收膜的电子装置在较高波长的光电转换部分上
  • Application No.: US12464557
    Application Date: 2009-05-12
  • Publication No.: US08717468B2
    Publication Date: 2014-05-06
  • Inventor: Kazuichiro Itonaga
  • Applicant: Kazuichiro Itonaga
  • Applicant Address: JP
  • Assignee: Sony Corporation
  • Current Assignee: Sony Corporation
  • Current Assignee Address: JP
  • Agency: Sheridan Ross P.C.
  • Priority: JP2008-126320 20080513
  • Main IPC: H04N3/14
  • IPC: H04N3/14 ;  H04N5/335
Solid-state imaging devices and electronic devices with short wavelength absorption film over higher wavelength photoelectric conversion portion
Abstract:
A solid-state imaging device is disclosed. The solid-state image device has pixels in which an absorption film that absorbs short wavelength-side light is formed on a photoelectric conversion portion for desired color light through an insulation film.
Abstract(Chinese):

公开了一种固态成像装置。 固态图像装置具有像素，其中通过绝缘膜在光电转换部分上形成吸收短波长侧光的吸收膜以获得所需的彩色光。

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