Invention Grant
- Patent Title: Solid-state imaging device applied to CMOS image sensor
- Patent Title (中): 固态成像装置应用于CMOS图像传感器
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Application No.: US12980852Application Date: 2010-12-29
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Publication No.: US08717471B2Publication Date: 2014-05-06
- Inventor: Maki Sato
- Applicant: Maki Sato
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-054912 20100311
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/335

Abstract:
According to one embodiment, a solid-state imaging device includes a pixel array, two signal lines and a row scanning circuit. The row scanning circuit simultaneously renders conductive, by the first read-out row scanning circuit and the second read-out row scanning circuit, the two transfer transistors, which are connected to two photoelectric conversion elements do not share a floating diffusion portion neighboring in the column direction, thereby reading out signals in parallel from the photoelectric conversion elements of the pixels of two rows of an odd-numbered row and an even-numbered row.
Public/Granted literature
- US20110221941A1 SOLID-STATE IMAGING DEVICE APPLIED TO CMOS IMAGE SENSOR Public/Granted day:2011-09-15
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