Invention Grant
- Patent Title: Thin film semiconductor device and method for manufacturing thin film semiconductor device
- Patent Title (中): 薄膜半导体器件及薄膜半导体器件的制造方法
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Application No.: US13161725Application Date: 2011-06-16
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Publication No.: US08717520B2Publication Date: 2014-05-06
- Inventor: Goro Hamagishi
- Applicant: Goro Hamagishi
- Applicant Address: JP Chita-Gun, Aichi-Ken
- Assignee: Japan Display West Inc.
- Current Assignee: Japan Display West Inc.
- Current Assignee Address: JP Chita-Gun, Aichi-Ken
- Agency: K&L Gates LLP
- Priority: JP2006-085955 20060327; JP2006-085956 20060327
- Main IPC: G02F1/1333
- IPC: G02F1/1333 ; G06F3/038 ; G02B27/22

Abstract:
In a display device that provides a first observation region with a first picture and provides a second observation region with a second picture, a double image made of the first picture and the second picture is suppressed. First columns of pixels that display the first picture and second columns of pixels that display the second picture are disposed alternately with a black matrix interposed between each neighboring pair of them. A light-shielding plate having light-shielding portions and openings is disposed above the panel. When a distance between the first observation region and the second observation region is denoted by V, a distance between the first observation region or the second observation region and the light-shielding plate is denoted by D, a distance between the light-shielding plate and the display panel is denoted by G, an interval of the first columns of pixels or the second columns of pixels is denoted by P, and the width of the black matrix is denoted by Q, an equation K≦Q×D/(D+G) is satisfied. The openings are disposed on lines connecting between a position directly above a center of the display panel and the black matrix.
Public/Granted literature
- US20110242466A1 THIN FILM SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THIN FILM SEMICONDUCTOR DEVICE Public/Granted day:2011-10-06
Information query
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