Invention Grant
- Patent Title: Device and method for inspecting polycrystalline silicon layer
- Patent Title (中): 多晶硅层检测装置及方法
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Application No.: US13214272Application Date: 2011-08-22
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Publication No.: US08717555B2Publication Date: 2014-05-06
- Inventor: Alexander Voronov , Suk-Ho Lee , Jae-Seung Yoo , Kyung-Hoe Heo , Gyoo-Wan Han
- Applicant: Alexander Voronov , Suk-Ho Lee , Jae-Seung Yoo , Kyung-Hoe Heo , Gyoo-Wan Han
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2010-0087596 20100907
- Main IPC: G01N21/00
- IPC: G01N21/00

Abstract:
A device for inspecting a polycrystalline silicon layer that is crystallized by receiving irradiated laser beams on a front side of the polycrystalline silicon layer includes: a light source configured to emit inspection beams to a rear side of the polycrystalline silicon layer; a light inspector configured to inspect the inspection beams reflected at the rear side of the polycrystalline silicon layer; and a controller that controls the light source and the light inspector.
Public/Granted literature
- US20120057148A1 DEVICE AND METHOD FOR INSPECTING POLYCRYSTALLINE SILICON LAYER Public/Granted day:2012-03-08
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