Invention Grant
US08717570B2 Method for determining the active doping concentration of a doped semiconductor region
有权
用于确定掺杂半导体区域的有源掺杂浓度的方法
- Patent Title: Method for determining the active doping concentration of a doped semiconductor region
- Patent Title (中): 用于确定掺杂半导体区域的有源掺杂浓度的方法
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Application No.: US13689473Application Date: 2012-11-29
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Publication No.: US08717570B2Publication Date: 2014-05-06
- Inventor: Janusz Bogdanowicz , Trudo Clarysse , Wilfried Vandervorst
- Applicant: IMEC , Katholieke Universiteit Leuven
- Applicant Address: BE Leuven BE Leuven
- Assignee: IMEC,Katholieke Universiteit Leuven
- Current Assignee: IMEC,Katholieke Universiteit Leuven
- Current Assignee Address: BE Leuven BE Leuven
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: G01N21/55
- IPC: G01N21/55

Abstract:
A method and system for optically determining a substantially fully activated doping profile are disclosed. The substantially fully activated doping profile is characterized by a set of physical parameters. In one aspect, the method includes obtaining a sample comprising a fully activated doping profile and a reference, and obtaining photomodulated reflectance (PMOR) offset curve measurement data and DC reflectance measurement data for the sample including the fully activated doping profile and for the reference. The method also includes determining values for the set of physical parameters of the doping profile based on both the photomodulated reflectance offset curve measurements and the DC reflectance measurements.
Public/Granted literature
- US20130155409A1 METHOD FOR DETERMINING THE ACTIVE DOPING CONCENTRATION OF A DOPED SEMICONDUCTOR REGION Public/Granted day:2013-06-20
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