Invention Grant
US08717814B2 3-D nonvolatile memory device and method of manufacturing the same, and memory system including the 3-D nonvolatile memory device
有权
3-D非易失性存储器件及其制造方法，以及包括3-D非易失性存储器件的存储器系统
- Patent Title: 3-D nonvolatile memory device and method of manufacturing the same, and memory system including the 3-D nonvolatile memory device
- Patent Title (中): 3-D非易失性存储器件及其制造方法，以及包括3-D非易失性存储器件的存储器系统
-
Application No.: US13599616Application Date: 2012-08-30
-
Publication No.: US08717814B2Publication Date: 2014-05-06
- Inventor: Sang Moo Choi , In Hey Lee
- Applicant: Sang Moo Choi , In Hey Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0108912 20111024
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C5/06
Abstract:
A three-dimensional (3-D) nonvolatile memory device includes vertical channel layers protruded from a substrate, interlayer insulating layers and memory cells, which are alternately stacked along the vertical channel layers, and select transistors including planar channel layers, each contacted with at least one of the vertical channel layers and being parallel to the substrate, and gate insulating layers formed over the planar channel layers.
Public/Granted literature
Information query
