Invention Grant
US08717817B2 Method for multi-page programming a non-volatile memory device by simultaneously activating a plurality of selection lines based on programmed data
有权
一种通过基于编程数据同时激活多条选择线来对非易失性存储器件进行多页编程的方法
- Patent Title: Method for multi-page programming a non-volatile memory device by simultaneously activating a plurality of selection lines based on programmed data
- Patent Title (中): 一种通过基于编程数据同时激活多条选择线来对非易失性存储器件进行多页编程的方法
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Application No.: US13161940Application Date: 2011-06-16
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Publication No.: US08717817B2Publication Date: 2014-05-06
- Inventor: Kyoung Lae Cho , Heeseok Eun , Junjin Kong
- Applicant: Kyoung Lae Cho , Heeseok Eun , Junjin Kong
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Stanzione & Kim, LLP
- Priority: KR10-2010-0057265 20100616
- Main IPC: G11C16/10
- IPC: G11C16/10
Abstract:
A method of programming a non-volatile memory device including a plurality of strings arranged in rows and columns comprises activating all or a part of selection lines in one column at the same time depending upon data to be programmed, driving a bit line corresponding to the one column with a bit line program voltage, and repeating the activating and the driving until bit lines corresponding to the columns are all driven.
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