Invention Grant
- Patent Title: Nonvolatile memory device and method of programming the same
- Patent Title (中): 非易失存储器件及其编程方法
-
Application No.: US13244217Application Date: 2011-09-23
-
Publication No.: US08717821B2Publication Date: 2014-05-06
- Inventor: Min Joong Jung , Seong Je Park
- Applicant: Seong Je Park , Jung Mi Shin
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0104854 20101026
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
The program method of a nonvolatile memory device includes detecting temperature, setting a step voltage, corresponding to an increment of a program voltage in a program operation of an incremental step pulse program (ISPP) method, wherein the step voltage changes based on the detected temperature, and performing the program operation and a program verification operation based on the set step voltage.
Public/Granted literature
- US20120163092A1 NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME Public/Granted day:2012-06-28
Information query
