Invention Grant
- Patent Title: Non-volatile memory device and read method thereof
- Patent Title (中): 非易失性存储器件及其读取方法
-
Application No.: US14023787Application Date: 2013-09-11
-
Publication No.: US08717822B2Publication Date: 2014-05-06
- Inventor: Ji-Sang Lee , Kihwan Choi
- Applicant: Ji-Sang Lee , Kihwan Choi
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce
- Priority: KR10-2010-0117947 20101125
- Main IPC: G11C16/06
- IPC: G11C16/06

Abstract:
In one embodiment, the method includes receiving a request to read data stored in a first memory cell associated with a first word line, and performing a first read operation on at least one memory cell associated with a second word line in response to the request. The second word line follows the first word line in a word line programming order, and the first read operation is performed over a first time period. The method further includes performing a second read operation on the first memory cell based on output from the first read operation. The second read operation is performed for a second time period, and the first time period is shorter than the second time period if output from performing the first read operation indicates the first memory cell is not coupled.
Public/Granted literature
- US20140010021A1 NON-VOLATILE MEMORY DEVICE AND READ METHOD THEREOF Public/Granted day:2014-01-09
Information query