A calibration module generates a plurality of calibration codes respectively for a first plurality of transistors located along (i) a plurality of bit lines and (ii) a first word line of a memory array. Each of the calibration codes is based on a distance of a corresponding one of the plurality of bit lines from an input of the first word line. A voltage generator outputs a first voltage generated based on a first plurality of codewords to an input of a second word line. A control module determines values of threshold voltages of a second plurality of transistors located along (i) the plurality of bit lines and (ii) the second word line based on (a) the first plurality of codewords and (b) currents sensed through the second plurality of transistors, and adjusts the values of the threshold voltages based on the calibration codes.