Invention Grant
US08717826B1 Estimation of memory cell wear level based on saturation current 有权
基于饱和电流估计存储单元磨损水平

Estimation of memory cell wear level based on saturation current
Abstract:
A method includes measuring a saturation current flowing through one or more analog memory cells. A wear level of the memory cells is deduced from the measured saturation current. Storage of data in the memory cells is configured based on the deduced wear level.
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