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US08717833B2 Semiconductor memory device having non-volatile memory circuits in single chip 有权
具有单芯片中的非易失性存储电路的半导体存储器件

Semiconductor memory device having non-volatile memory circuits in single chip
Abstract:
Based on a continuous erase start signal outputted, in response to an inputted continuous erase command, from a continuous erase control circuit, a shift circuit outputs a control signal for giving instructions to execute respective data erase operation to a plurality of non-volatile memory circuits sequentially, and when the data erase operation in all of the non-volatile memory circuits has been completed, the shift circuit outputs a continuous erase completion signal. Thereby, the data erase operation in all of the non-volatile memory circuits built in one chip can be continuously executed by one continuous erase command as is also the case where a single non-volatile memory circuit is built in.
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