Invention Grant
US08717833B2 Semiconductor memory device having non-volatile memory circuits in single chip
有权
具有单芯片中的非易失性存储电路的半导体存储器件
- Patent Title: Semiconductor memory device having non-volatile memory circuits in single chip
- Patent Title (中): 具有单芯片中的非易失性存储电路的半导体存储器件
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Application No.: US12108256Application Date: 2008-04-23
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Publication No.: US08717833B2Publication Date: 2014-05-06
- Inventor: Motoko Tanishima
- Applicant: Motoko Tanishima
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Priority: JP2004-363259 20041215
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/22 ; G11C7/10

Abstract:
Based on a continuous erase start signal outputted, in response to an inputted continuous erase command, from a continuous erase control circuit, a shift circuit outputs a control signal for giving instructions to execute respective data erase operation to a plurality of non-volatile memory circuits sequentially, and when the data erase operation in all of the non-volatile memory circuits has been completed, the shift circuit outputs a continuous erase completion signal. Thereby, the data erase operation in all of the non-volatile memory circuits built in one chip can be continuously executed by one continuous erase command as is also the case where a single non-volatile memory circuit is built in.
Public/Granted literature
- US20080205165A1 Semiconductor Memory Device Public/Granted day:2008-08-28
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