Invention Grant
- Patent Title: Multi-port memory based on DRAM core
- Patent Title (中): 基于DRAM内核的多端口存储器
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Application No.: US13601406Application Date: 2012-08-31
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Publication No.: US08717842B2Publication Date: 2014-05-06
- Inventor: Takaaki Suzuki , Shinnosuke Kamata
- Applicant: Takaaki Suzuki , Shinnosuke Kamata
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Priority: JP2000-387891 20001220; JP2000-398893 20001227; JP2000-399052 20001227; JP2001-034361 20010209; JP2001-037547 20010214; JP2002-070514 20020314
- Main IPC: G11C8/00
- IPC: G11C8/00
Abstract:
A semiconductor memory device includes a plurality of N external ports, each of which receives commands, and an internal circuit which performs at least N access operations during a minimum interval of the commands that are input into one of the external ports.
Public/Granted literature
- US20130201751A1 MULTI-PORT MEMORY BASED ON DRAM CORE Public/Granted day:2013-08-08
Information query
