Invention Grant
- Patent Title: Semiconductor device which is subjected to optical proximity correction
- Patent Title (中): 进行光学邻近校正的半导体器件
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Application No.: US13888345Application Date: 2013-05-06
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Publication No.: US08719740B2Publication Date: 2014-05-06
- Inventor: Hironobu Taoka , Yusaku Ono
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-127798 20050426
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
An object of the present invention is to reduce processing time and manufacturing cost for a semiconductor device including a logic circuit. To accomplish the above object, an area (114) for forming a logic circuit includes a first area (114b, 170) which is subjected to optical proximity correction with predetermined accuracy, and a second area (114a, 180) which is subjected to optical proximity correction with accuracy lower than said predetermined accuracy. Especially, the first area (114b, 170) includes a gate interconnection line (172) which acts as a transistor, and the second area (114a, 180) includes a dummy layout pattern (182) which does not act as a transistor.
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