Invention Grant
US08721786B2 Czochralski crystal growth process furnace that maintains constant melt line orientation and method of operation
有权
Czochralski晶体生长工艺炉保持恒定的熔体线取向和操作方法
- Patent Title: Czochralski crystal growth process furnace that maintains constant melt line orientation and method of operation
- Patent Title (中): Czochralski晶体生长工艺炉保持恒定的熔体线取向和操作方法
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Application No.: US12877140Application Date: 2010-09-08
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Publication No.: US08721786B2Publication Date: 2014-05-13
- Inventor: Mark S. Andreaco , Troy Marlar , Brant Quinton , Piotr Szupryczynski
- Applicant: Mark S. Andreaco , Troy Marlar , Brant Quinton , Piotr Szupryczynski
- Applicant Address: US PA Malvern
- Assignee: Siemens Medical Solutions USA, Inc.
- Current Assignee: Siemens Medical Solutions USA, Inc.
- Current Assignee Address: US PA Malvern
- Agent Peter Kendall
- Main IPC: C30B15/26
- IPC: C30B15/26

Abstract:
A Czochralski process (“CZ”) crystal growth method and furnace having a heater capable of generating a heating zone, a crucible within the heating zone and capable of retaining a volume of molten crystal growth material forming a melt line oriented in a designated position within the heating zone, a seed growth rod retractable from the crucible with a rod retraction mechanism, for forming a crystal boule thereon proximal the melt line from the molten crystal growth material. The furnace causes relative movement between the crucible and heating zone as the crystal boule is retracted, so that the melt line is maintained in the designated position within the heating zone. In some embodiments relative movement is based at least in part on sensed weight of the growing crystal boule. In other embodiments the crucible growth rod retraction mechanism are fixed relative to each other by a gantry.
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