Invention Grant
- Patent Title: Film deposition apparatus
- Patent Title (中): 膜沉积装置
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Application No.: US12963673Application Date: 2010-12-09
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Publication No.: US08721790B2Publication Date: 2014-05-13
- Inventor: Hitoshi Kato , Manabu Honma , Kohichi Orito , Yasushi Takeuchi , Hiroyuki Kikuchi
- Applicant: Hitoshi Kato , Manabu Honma , Kohichi Orito , Yasushi Takeuchi , Hiroyuki Kikuchi
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2009-280869 20091210
- Main IPC: C23C16/453
- IPC: C23C16/453 ; C23C16/455 ; C23C16/458 ; H01L21/306 ; C23F1/00 ; C23C16/06 ; C23C16/22

Abstract:
A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.
Public/Granted literature
- US20110139074A1 FILM DEPOSITION APPARATUS Public/Granted day:2011-06-16
Information query
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